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| SiBar Thyristor Surge Protectors TVAxxxNSA-L Series SiBar thyristor surge protection devices help protect sensitive telecommunication equipment from the hazards caused by lightning, power contact, and power induction. These devices have a high electrical surge capability to help protect against transient faults and a high off-state impedance, rendering them virtually transparent during normal system operation. SiBar thyristor surge protectors assist designers to meet telecommunication and computer telephony equipment requirements and industry specifications. Benefits: Features: * RoHS compliant * Helps provide protection for sensitive telecom electronic equipment * Low leakage current * Low power dissipation * Fast, reliable operation * No wear-out mechanisms * Assists designers to meet worldwide telecom standards * Helps reduce warranty and service costs * Easy installation * Helps improve power efficiency of equipment * Bidirectional crowbar transient voltage protection * Voltage range: 170V - 275V with improved Vdrm/Vbo range * High off-state impedance * Low on-state voltage * High surge capability * Short-circuit failure mode * Surface-mount technology * DO-214AC SMA package * 10 x 1000 s 50A surge rating * Helps equipment comply with TIA-968, Telcordia GR-1089, IEC61000-4-5, ITU K.20/21/45 Applications: * Modems * Fax machines * Phones, answering machines * PBX systems * Set top boxes * POS systems * Analog and digital linecards (xDSL, T1/E1...) * Other customer premise and central office network equipment requiring protection Document: SCD 27217 SiBar Thyristor Surge Protectors (c) 2007 Tyco Electronics Corporation. All rights Reserved. 1 Status: Released Rev: B Date: DECEMBER 12, 2007 SiBar Thyristor Surge Protectors TVAxxxNSA-L Series Table SB1 - Electrical Characteristics Part Number TVA170NSA-L TVA220NSA-L TVA275NSA-L VDM Max. (V) 170 220 275 VBO Max. (V) 220 300 350 IH Min. (mA) 150 150 150 VT Max. (V) 4 4 4 C1 (Typ) 50VDC Bias 20 17 16 C2 (Typ) 2VDC Bias 39 33 31 Off-State Current VD2=VDM (A) 5 5 5 Notes: All electrical characteristics are measured at 25C. VDM measured per UL497B pulse requirements: at max. off-state leakage current (IDM) = 5 A. VBO measured at 100V/s. C1 measured at 1 MHz with a 50 VDC bias. C2 measured at 1MHz with a 2VDC bias. Table SB2 - Surge Current Rating TIA-968 Type A Part Number TVAxxxNSA-L Ipp(A) 5 x 320 s 90 Type B Ipp(A) pp (A) 10 x 560 s 10 x 160 s 70 100 Ipp (A) Ipp (A) 10 x 1000 s 2 x 10 s 50 150 Ipp (A) 8 x 20 s 150 ITSM IPP (A) di/dt dV/dt 5 x 310 s Min. (A/s) (V/s) (VOC: 10 x 700s) (A) 90 22 500 2000 Telcordia GR-1089* IEC61000-4-5 ITU K.20/21/45* Notes: *Lightning current wave forms for applicable industry specification. ITSM, peak on-state surge current is measured at 60 Hz, one cycle. di/dt: critical rate-of-rise of on-state current (pulsed power amplifier Vmax = 600V; C = 30F). dV/dt: critical rate-of-rise of off-stage voltage (linear wave form, VD = rated VBO, Tj = 25C Document: SCD 27217 SiBar Thyristor Surge Protectors (c) 2007 Tyco Electronics Corporation. All rights Reserved. 2 Status: Released Rev: B Date: DECEMBER 12, 2007 SiBar Thyristor Surge Protectors TVAxxxNSA-L Series Table SB3 - Dimensions in Millimeters A Dimension TVAxxxNSA-L Min. 4.06 (0.160) H Dimension TVAxxxNSA-L Min. 0.051 (0.002) Max. 0.200 (0.008) Min. 0.150 (0.006) Max. 4.57 (0.180) Min. 2.25 (0.089) J Max. 0.41 (0.016) Min. 0.76 (0.030) B Max. 2.92 (0.115) Min. 1.90 (0.075) K Max. 1.52 (0.060) C Max. 2.41 (0.095) P Ref 0.051 (0.0020) Min 4.80 (0.189) Min. 1.25 (0.049) S Max. 5.59 (0.220) D Max. 1.65 (0.065) Notes: *D dimension is measured within dimension P. TVA series devices use industry standard SMA package type. All devices are bidirectional and may be oriented in either direction for installation Table SB4 - Physical Characteristics and Environmental Specifications Lead material Encapsulating material Solderability Solder heat withstand Solvent resistance Mechanical shock Vibration Storage temperature (C) Operating temperature (C) Junction temperature (C) Matte tin finish (-L devices) Epoxy, meets UL94V-0 requirements per MIL-STD-750, Method 2026 per MIL-STD-750, Method 2031 per MIL-STD-750, Method 1022 per MIL-STD-750, Method 2016 per MIL-STD-750, Method 2056 -55 to 150 -40 to 125 175 Maximum Lead Temperature for Soldering Purpose; for 10s (C) 260 Table SB5 - Reliability Tests Test High temperature, reverse bias High humidity, high temperature, reverse bias High temperature storage life Temperature cycling Autoclave Conditions +100C, 50VDC bias 85% RH, +85C, 50VDC bias +150C -65C to +150C, 15 minute dwell 100% RH, +121C, 15 PSI Duration 1000 hours 1000 hours 1000 hours 1000 cycles 96 hours Document: SCD 27217 SiBar Thyristor Surge Protectors (c) 2007 Tyco Electronics Corporation. All rights Reserved. 3 Status: Released Rev: B Date: DECEMBER 12, 2007 SiBar Thyristor Surge Protectors TVAxxxNSA-L Series Document: SCD 27217 SiBar Thyristor Surge Protectors (c) 2007 Tyco Electronics Corporation. All rights Reserved. 4 Status: Released Rev: B Date: DECEMBER 12, 2007 SiBar Thyristor Surge Protectors TVAxxxNSA-L Series Table SB6 - Packaging and Marking Information Recommended Pad Layout (millimeters/inchs) Part Description TVA170NSA-L TVA220NSA-L TVA275NSA-L Tape and Reel Quantity 5,000 5,000 5,000 Standard Package 20,000 20,000 20,000 Part Marking 17NA 22NA 27NA Dimension A (Nom.) 2.0 (0.079) 2.0 (0.079) 2.0 (0.079) Dimension B (Nom.) 2.0 (0.079) 2.0 (0.079) 2.0 (0.079) Dimension C (Nom.) 2.0 (0.079) 2.0 (0.079) 2.0 (0.079) Agency Recognition* ** ** ** * UL 497B, File # E179610 **UL Pending 308 Constitution Drive, MS R21/2A Menlo Park, CA USA 94025-1164 Tel (800) 227-7040 (650) 361-6900 Fax (650) 361-2508 www.circuitproection.com www.circuitprotection.com.hk (Chinese) www.circuitprotection.jp (Japanese) Raychem, PolySwitch, SiBar, TE Logo and Tyco Electronics are trademarks. All other trademarks and copyrights are property of their respective owners. Document: SCD 27217 SiBar Thyristor Surge Protectors (c) 2007 Tyco Electronics Corporation. All rights Reserved. 5 Status: Released Rev: B Date: DECEMBER 12, 2007 |
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